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| DC Field | Value | Language |
|---|---|---|
| dc.creator | Andres, P. L. de | - |
| dc.creator | Ramírez, Rafael | - |
| dc.creator | Vergés, José A. | - |
| dc.date | 2008-01-29T13:44:55Z | - |
| dc.date | 2008-01-29T13:44:55Z | - |
| dc.date | 2008-01-14 | - |
| dc.date.accessioned | 2017-01-31T00:59:50Z | - |
| dc.date.available | 2017-01-31T00:59:50Z | - |
| dc.identifier | Phys Rev B 77 (4) 045403 (2008) | - |
| dc.identifier | http://hdl.handle.net/10261/2757 | - |
| dc.identifier.uri | http://dspace.mediu.edu.my:8181/xmlui/handle/10261/2757 | - |
| dc.description | We show that two graphene layers stacked directly on top of each other (AA stacking) form strong chemical bonds when the distance between planes is 0.156 nm. Simultaneously, C-C in-plane bonds are considerably weakened from partial double-bond (0.141 nm) to single bond (0.154 nm). This polymorphic form of graphene bilayer is meta-stable w.r.t. the one bound by van der Waals forces at a larger separation (0.335 nm) with an activation energy of 0.16 eV/cell. Similarly to the structure found in hexaprismane, C forms four single bonds in a geometry mixing 90 and 120 angles. Intermediate separations between layers can be stabilized under external anisotropic stresses showing a rich electronic structure changing from semi-metal at van der Waals distance, to metal when compressed, to wide gap semiconductor at the meta-stable minimum. | - |
| dc.description | Financed by CICYT under contracts MAT-2005-3866, MAT-2006-03741, FIS-2006-12117-C04-03,NAN-2004-09183-C10-08. We acknowledge the use of the Spanish Supercomputing Network and the CTI (CSIC). | - |
| dc.description | Peer reviewed | - |
| dc.format | 212701 bytes | - |
| dc.format | application/pdf | - |
| dc.language | eng | - |
| dc.publisher | American Physical Society | - |
| dc.rights | openAccess | - |
| dc.subject | few graphene layers | - |
| dc.title | Strong covalent bonding between two graphene layers | - |
| dc.type | Artículo | - |
| Appears in Collections: | Digital Csic | |
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