Please use this identifier to cite or link to this item:
http://dspace.mediu.edu.my:8181/xmlui/handle/10261/4139Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.creator | Muñoz Zurita, Ana Luz | - |
| dc.creator | Campos Acosta, Joaquín | - |
| dc.creator | Pons Aglio, Alicia | - |
| dc.creator | Shcherbakovta, A. | - |
| dc.date | 2008-05-12T09:33:35Z | - |
| dc.date | 2008-05-12T09:33:35Z | - |
| dc.date | 2007 | - |
| dc.date.accessioned | 2017-01-31T01:13:57Z | - |
| dc.date.available | 2017-01-31T01:13:57Z | - |
| dc.identifier | Optica Pura y Aplicada 40 (1) 105-109 (2007) | - |
| dc.identifier | 0030-3917 | - |
| dc.identifier | http://hdl.handle.net/10261/4139 | - |
| dc.identifier.uri | http://dspace.mediu.edu.my:8181/xmlui/handle/10261/4139 | - |
| dc.description | A. L. Muñoz Zurita agradece a CONACyT, México, por la beca mixta que le ha otorgado para su estancia en el IFA-CSIC | - |
| dc.description | [ES]La reflectancia de un fotodiodo, junto con su eficiencia cuántica interna, determinan el valor de la responsividad espectral, característica radiométrica fundamental de estos dispositivos usados en la medida de radiación óptica. En este trabajo se presenta el montaje experimental y los resultados obtenidos al medir la reflectancia de fotodiodos de InGaAs/InP de los usados habitualmente en laboratorios nacionales, procedentes de tres fabricantes diferentes. Asimismo se estudia la variación de la reflectancia con el estado de polarización de la radiación incidente para ángulos pequeños. Los resultados obtenidos indican que algunos modelos poseen una estructura antirreflejante en su superficie sensible y que para ángulos menores que 7,4º, la reflectancia no cambia con el estado de polarización, dentro de la incertidumbre de las medidas. | - |
| dc.description | [EN]Both the reflectance and the internal quantum efficiency determine the photodiode spectral responsivity, which is the radiometric characteristic of interest in the fields where these devices can be used for optical radiation measurements. In this work, we present the experimental set-up for measuring the photodiode reflectance as well as the results of such measurements related to InGaAs/InP-photodiodes exploited in national laboratories and coming from three different manufacturers. Changing the reflectance with varying the polarization state of the incoming optical radiation for small angles of incidence has been also studied. The obtained experimental results show that some models of photodiodes have got an anti-reflecting coating on their sensitive facets and that reflectance does not change with varying the light polarization state within the measurement uncertainty, when the angles of incidence were smaller that 7,4º.%3E | - |
| dc.description | Peer reviewed | - |
| dc.format | 180301 bytes | - |
| dc.format | application/pdf | - |
| dc.language | spa | - |
| dc.publisher | Sociedad Española de Óptica | - |
| dc.rights | openAccess | - |
| dc.subject | Fotodiodos InGaAs | - |
| dc.subject | Infrarrojo Cercano | - |
| dc.subject | Reflectancia | - |
| dc.subject | Patrones en IR próximo | - |
| dc.subject | InGaAs Photodiodes | - |
| dc.subject | Near infrared | - |
| dc.subject | Reflectanceed | - |
| dc.subject | Near IR standards | - |
| dc.title | Medida de la reflectancia de fotodiodos de InGaAs/InP | - |
| dc.title | Measuring the reflectance of InGaAs/InP photodiodes | - |
| dc.type | Artículo | - |
| Appears in Collections: | Digital Csic | |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.