Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/10261/4299
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dc.creatorLópez-Ríos, T.-
dc.creatorBriggs, A-
dc.creatorGuillet, S.-
dc.creatorBaró, A. M.-
dc.creatorLuna, Mónica-
dc.date2008-05-16T09:42:28Z-
dc.date2008-05-16T09:42:28Z-
dc.date1995-01-23-
dc.date.accessioned2017-01-31T01:20:27Z-
dc.date.available2017-01-31T01:20:27Z-
dc.identifierAppl. Phys. Lett. 66 (4), 529 (1995)-
dc.identifier003-6951-
dc.identifierhttp://hdl.handle.net/10261/4299-
dc.identifier.urihttp://dspace.mediu.edu.my:8181/xmlui/handle/10261/4299-
dc.descriptionThe electrical conductivity between 4 and 300 K of Ag thin films (up to 30 mm grown at room temperature on Si(100) vicinal surfaces has been measured and their morphology imaged with an atomic force microscope. A noticeable anisotropy of the resistivity of the films which is related to the structure of the films has been found)-
dc.descriptionLaboratories du CNRS Departamento de Física Materia Condensada. Universidad Autónoma.-
dc.descriptionPeer reviewed-
dc.format143459 bytes-
dc.formatapplication/pdf-
dc.languageeng-
dc.publisherAmerican Institute of Physics-
dc.rightsopenAccess-
dc.subjectThin films-
dc.titleAnisotropic conductivity of silver thin films grown on silicon (100) vicinal surfaces-
dc.typeArtículo-
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