Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2015
Title: Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
Issue Date: 30-May-2013
Publisher: Sociedade Brasileira de Física
Description: It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.
URI: http://koha.mediu.edu.my:8181/jspui/handle/123456789/2015
Other Identifiers: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0102-47442002000400003
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01024744&date=2002&volume=24&issue=4&spage=379
Appears in Collections:Physics and Astronomy

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