Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2015

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DC Field	Value	Language
dc.creator	Amato M. A.	-
dc.date	2002	-
dc.date.accessioned	2013-05-29T21:24:31Z	-
dc.date.available	2013-05-29T21:24:31Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0102-47442002000400003	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01024744&date=2002&volume=24&issue=4&spage=379	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2015	-
dc.description	It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Revista Brasileira de Ensino de Física	-
dc.title	Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors	-
Appears in Collections:	Physics and Astronomy

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