Electron Transmission Through Nonabrupt GaAs/AlxGa1-xAs Double-Barriers Subjected to an Electric Field

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2315

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DC Field	Value	Language
dc.creator	Lima M. C. A.	-
dc.creator	Farias G. A.	-
dc.creator	Freire V. N.	-
dc.date	1997	-
dc.date.accessioned	2013-05-29T22:14:41Z	-
dc.date.available	2013-05-29T22:14:41Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331997000400020	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1997&volume=27&issue=4&spage=560	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2315	-
dc.description	It is shown that the existence of nonabrupt interfaces modify electric field effects on the electron transmission through a GaAs/AlxGa1-xAs double-barrier. When the applied electric intensity is 25 kV/cm, and the abrupt well and barriers are 100 Å wide, interfaces as thin as two GaAs lattice parameters are responsible for shifts at least of 10 meV in the electron tunneling resonance energies. The type of interface potential and electron effective mass description changes significantly theoretical results related to the electric field influence on the electron transmission properties.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Electron Transmission Through Nonabrupt GaAs/AlxGa1-xAs Double-Barriers Subjected to an Electric Field	-
Appears in Collections:	Physics and Astronomy

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