Interface Morphology of Gen / Si Quantum Wells Studied with Raman Spectroscopy and High Resolution X-Ray Diffraction

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2333

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DC Field	Value	Language
dc.creator	Narvaez Gustavo A.	-
dc.creator	Torriani I. C. L.	-
dc.creator	Cerdeira F.	-
dc.creator	Bean J.C.	-
dc.date	1997	-
dc.date.accessioned	2013-05-29T22:17:41Z	-
dc.date.available	2013-05-29T22:17:41Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331997000400026	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1997&volume=27&issue=4&spage=632	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2333	-
dc.description	We report Raman scattering and high-resolution X-ray diffraction measurements performed on a series of MBE-grown Si / Gen / Si quantum wells with n varying from 3 to 6. Our results are consistent with a gradual evolution of the Si / Ge interface which starts with Ge segregation and formation of terraces for low Ge coverage, to smooth 2D Ge layers, bounded by interfacial alloy layers, for coverages superior to 4M Ls.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Interface Morphology of Gen / Si Quantum Wells Studied with Raman Spectroscopy and High Resolution X-Ray Diffraction	-
Appears in Collections:	Physics and Astronomy

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