Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2345

Full metadata record

DC Field	Value	Language
dc.creator	Freitas Jr.,J.A.	-
dc.creator	Moore W.J.	-
dc.date	1998	-
dc.date.accessioned	2013-05-29T22:19:41Z	-
dc.date.available	2013-05-29T22:19:41Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331998000100002	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1998&volume=28&issue=1&spage=12	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2345	-
dc.description	The wide bandgap semiconductors Silicon carbide and gallium nitride have been studied by Raman scattering, photoluminescense, and infrared absorption. Raman scattering studies determined crystalline quality and polytype of bulk and thin film samples at room temperature to detected and/or identify impurity centers and structure related defects and their role on the electronic properties of the materiais. Infrared absorption spectroscpopy was used to measure the binding enrgy of donors and their concentration.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors	-
Appears in Collections:	Physics and Astronomy

Files in This Item:

There are no files associated with this item.

DSpace JSPUI