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dc.creatorAristone F.-
dc.creatorPortal J.-C.-
dc.creatorPalmier J. F.-
dc.creatorHarmand J. C.-
dc.date1999-
dc.date.accessioned2013-05-29T23:03:20Z-
dc.date.available2013-05-29T23:03:20Z-
dc.date.issued2013-05-30-
dc.identifierhttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000200018-
dc.identifierhttp://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=2&spage=375-
dc.identifier.urihttp://koha.mediu.edu.my:8181/jspui/handle/123456789/2606-
dc.descriptionOscillations in the vertical magneto-transport of a GaInAs-AlInAs superlattice were observed and explained as being the modulation of miniband properties. We explain that such a modulation is due to the Landau levels of the highly (Si) n+ doped regions. It is shown that phase and amplitude of these oscillations are dependent on the angle between electric and magnetic fields. This phenomenon is thus similar to the Shubnikov - de Haas effect in bulk materials, even though the active region of the superlattice is not intentionally doped. Very highly doped three-dimensional regions were grown on each side of the superlattice to allow for the process of Ohmic contact formation.-
dc.publisherSociedade Brasileira de Física-
dc.sourceBrazilian Journal of Physics-
dc.titleShubnikov-de Haas - like oscillations in the vertical transport of semiconductor superlattices-
Appears in Collections:Physics and Astronomy

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