Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2612

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DC Field	Value	Language
dc.creator	Bhagwat S.S.	-
dc.creator	Bhangale A.R.	-
dc.creator	Patil J.M.	-
dc.creator	Shirodkar V.S.	-
dc.creator	Pinto R.	-
dc.creator	Apte P.R.	-
dc.creator	Pai S.P.	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:04:20Z	-
dc.date.available	2013-05-29T23:04:20Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000200020	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=2&spage=388	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2612	-
dc.description	Calcium Fluoride buffer lavers were grown on Si < 100 > substrates using the low energy cluster beam deposition technique. The films were annealed at various temperatures ranging between 500oC and 700oC. The SEM studies showed that as-deposited films were well oriented along the c-axis and had very smooth surface morphology. The annealed films on the contarary, showed lowering of peak intensities and roughening of the surface. The dielectric constant derived from the C-V measurements at 1 MHz were 2.01 and 18 for as-deposited and annealed films respectively.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties	-
Appears in Collections:	Physics and Astronomy

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