Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2675
Title: Low temperature photoluminescence in ultra-thin germanium quantum wells
Issue Date: 30-May-2013
Publisher: Sociedade Brasileira de Física
Description: We measured the photoluminescence (PL) spectra of a series of Ge n quantum wells as a function of temperature, from 2K to 50K. The PL spectra at 2.1K are dominated by broad emission lines, which can be interpreted as recombination across the indirect gap of the Si/Ge microstructure and are strongly influenced by the interface morphology of each sample. Beyond T <img src="http:/img/fbpe/bjp/v29n3/547i1.gif" alt="547i1.gif (50 bytes)"> 15K, all samples show identical spectra in which the broad structures are replaced by thin, strong lines. We interpret these changes as a quenching of the recpmbination across the gap PL of the microstructure and the appearance of defect-related peaks from the Si substrate.
URI: http://koha.mediu.edu.my:8181/jspui/handle/123456789/2675
Other Identifiers: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000300020
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=3&spage=547
Appears in Collections:Physics and Astronomy

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