Low temperature photoluminescence in ultra-thin germanium quantum wells

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2675

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DC Field	Value	Language
dc.creator	Rodrigues P. A. M.	-
dc.creator	Araújo-Silva M. A.	-
dc.creator	Narvaez G. A.	-
dc.creator	Cerdeira F.	-
dc.creator	Bean J. C.	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:14:51Z	-
dc.date.available	2013-05-29T23:14:51Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000300020	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=3&spage=547	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2675	-
dc.description	We measured the photoluminescence (PL) spectra of a series of Ge n quantum wells as a function of temperature, from 2K to 50K. The PL spectra at 2.1K are dominated by broad emission lines, which can be interpreted as recombination across the indirect gap of the Si/Ge microstructure and are strongly influenced by the interface morphology of each sample. Beyond T <img src="http:/img/fbpe/bjp/v29n3/547i1.gif" alt="547i1.gif (50 bytes)"> 15K, all samples show identical spectra in which the broad structures are replaced by thin, strong lines. We interpret these changes as a quenching of the recpmbination across the gap PL of the microstructure and the appearance of defect-related peaks from the Si substrate.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Low temperature photoluminescence in ultra-thin germanium quantum wells	-
Appears in Collections:	Physics and Astronomy

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