Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2696
Title: "Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon
Issue Date: 30-May-2013
Publisher: Sociedade Brasileira de Física
Description: A novel microscopic mechanism for hydrogen-enhanced oxygen diffusion in p-doped silicon is proposed. A path for joint diffusion of O and H is obtained from an ab-initio molecular dynamics "kick" simulation. The migration pathway consists of a two-step mechanism, with a maximum energy of 1.46 eV. This path represents a 0.54 eV reduction in the static barrier when compared with the diffusion of isolated O in Si, in excellent agreement with experiments.
URI: http://koha.mediu.edu.my:8181/jspui/handle/123456789/2696
Other Identifiers: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400002
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=611
Appears in Collections:Physics and Astronomy

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