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http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2696
Title: | "Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon |
Issue Date: | 30-May-2013 |
Publisher: | Sociedade Brasileira de Física |
Description: | A novel microscopic mechanism for hydrogen-enhanced oxygen diffusion in p-doped silicon is proposed. A path for joint diffusion of O and H is obtained from an ab-initio molecular dynamics "kick" simulation. The migration pathway consists of a two-step mechanism, with a maximum energy of 1.46 eV. This path represents a 0.54 eV reduction in the static barrier when compared with the diffusion of isolated O in Si, in excellent agreement with experiments. |
URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/2696 |
Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400002 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=611 |
Appears in Collections: | Physics and Astronomy |
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