"Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2696

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DC Field	Value	Language
dc.creator	Capaz R. B.	-
dc.creator	Assali L. V. C.	-
dc.creator	Kimerling L. C.	-
dc.creator	Cho K.	-
dc.creator	Joannopoulos J. D.	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:18:24Z	-
dc.date.available	2013-05-29T23:18:24Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400002	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=611	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2696	-
dc.description	A novel microscopic mechanism for hydrogen-enhanced oxygen diffusion in p-doped silicon is proposed. A path for joint diffusion of O and H is obtained from an ab-initio molecular dynamics "kick" simulation. The migration pathway consists of a two-step mechanism, with a maximum energy of 1.46 eV. This path represents a 0.54 eV reduction in the static barrier when compared with the diffusion of isolated O in Si, in excellent agreement with experiments.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	"Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon	-
Appears in Collections:	Physics and Astronomy

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