Erbium in a-Si:H

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2699

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DC Field	Value	Language
dc.creator	Tessler Leandro R.	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:18:54Z	-
dc.date.available	2013-05-29T23:18:54Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400003	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=616	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2699	-
dc.description	A review of the current status of research on Er 3+ doped hydrogenated amorphous silicon (a-Si:H) is presented. Er has been introduced in a-Si:H and a-SiOx:H by ion implantation, co-sputtering and PECVD. In all cases, the characteristic atomic-like intra-4f 4I13/2 -> 4I15/2 photoluminescence emission at ~ 1.54 µm is observed at room temperature. The Er 3+ luminescence probability is determined by the local neighborhood of the ions. Therefore, local probes like EXAFS and Mössbauer spectroscopy have yielded very important information. A discussion of excitation processes, electroluminescence, and electronic doping effects, is also presented.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Erbium in a-Si:H	-
Appears in Collections:	Physics and Astronomy

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