Nonlinear spatio-temporal dynamics in semiconductors

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DC Field	Value	Language
dc.creator	Schöll Eckehard	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:19:54Z	-
dc.date.available	2013-05-29T23:19:54Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400005	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=627	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2705	-
dc.description	We review recent theoretical advances in the modeling and computer simulation of complex non-linear spatio- temporal dynamics of charge carriers in semiconductors. Among the particularly instructive examples are investigations of current filaments in doped semiconductors in the regime of low temperature impurity breakdown. The nascence of current filaments in thin GaAs films with different contact geometries, including circular samples (Corbino disks) with symmetry breaking instabilities, is investigated, and the role of global couplings induced by the operating load circuit is analysed.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Nonlinear spatio-temporal dynamics in semiconductors	-
Appears in Collections:	Physics and Astronomy

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