Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2738

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DC Field	Value	Language
dc.creator	Chitta V. A.	-
dc.creator	Maialle M. Z.	-
dc.creator	Leão S. A.	-
dc.creator	Degani M. H.	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:25:24Z	-
dc.date.available	2013-05-29T23:25:24Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400016	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=702	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2738	-
dc.description	We calculate the characteristic current-voltage curve of a tunneling device based on semimagnetic semiconductor materials. The device is a heterostructure with layers of Cd1<FONT FACE=Symbol>-</FONT> x Mn x Te in which the magnetic ions Mn2+ interact strongly with the conducting electrons via the s-d exchange interaction. Thermal fluctuations of Mn2+ magnetic moments cause spin-dependent electron scattering that modifies the characteristic current-voltage curve. Our calculation shows how this electron-ion scattering is expected to affect the spin dynamics in transport measurements.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures	-
Appears in Collections:	Physics and Astronomy

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