Temperature dependence of the absorption coefficient in doped quantum wells

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2753

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DC Field	Value	Language
dc.creator	Baldan M.R.	-
dc.creator	Serra R.M.	-
dc.creator	Emmel P.D.	-
dc.creator	Silva A. Ferreira da	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:27:55Z	-
dc.date.available	2013-05-29T23:27:55Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400021	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=723	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2753	-
dc.description	In this work we present a calculation of the infrared optical absorption coefficient for a Ga1-xAl xAs quantum well (QW) as a function of donor impurity concentration, compensation and temperature. We treat this problem using a Self-Consistent Method (SC) calculation taking into account donors as major impurities. The Variational Method was used to obtain the ground state wave-function of an electron bound to a donor impurity in a QW. The results show a shift of energy in the absorption coefficient.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Temperature dependence of the absorption coefficient in doped quantum wells	-
Appears in Collections:	Physics and Astronomy

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