Electronic structure in narrow-gap quantum dots

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2760

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DC Field	Value	Language
dc.creator	Prado S. J.	-
dc.creator	Marques G. E.	-
dc.creator	Trallero-Giner C.	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:28:55Z	-
dc.date.available	2013-05-29T23:28:55Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400023	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=730	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2760	-
dc.description	In this work we calculated the electronic structure of spherical quantum dots based on zincblend semiconductor compounds. The strong conduction-valence band coupling in this class of semi-conductors induces a strong mixing of the electronic states which requires a theoretical model to properly take into acount these effects. We have used a full 8 x 8 Kane Hamiltonian in order to include the strong admixture and study the set of symetries associated with these electronic states and their angular momentum in this central force problem. As an application, we have calculated the electronic structure in narrow-gap HgCdTe, InSb and CdTe quantum dots.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Electronic structure in narrow-gap quantum dots	-
Appears in Collections:	Physics and Astronomy

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