Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2769
Title: Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
Issue Date: 30-May-2013
Publisher: Sociedade Brasileira de Física
Description: We report the observation of a metal-insulator transition in zero magnetic eld in a two dimensional electron gas under the influence of a plane of InAs self-assembled quantum dots located at 30 Å below the AlGaAs/GaAs heterointerface. The transition is observed as a function of temperature and electric field at B=0. A scaling analysis yields exponents similar to those obtained for Si MOSFET's . We suggest that the disorder introduced by the quantum dots plays a crucial role.
URI: http://koha.mediu.edu.my:8181/jspui/handle/123456789/2769
Other Identifiers: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400026
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=742
Appears in Collections:Physics and Astronomy

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.