Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2769

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DC Field	Value	Language
dc.creator	Ribeiro E.	-
dc.creator	Jäggi R.	-
dc.creator	Heinzel T.	-
dc.creator	Ensslin K.	-
dc.creator	Medeiros-Ribeiro G.	-
dc.creator	Petroff P. M.	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:30:25Z	-
dc.date.available	2013-05-29T23:30:25Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400026	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=742	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2769	-
dc.description	We report the observation of a metal-insulator transition in zero magnetic eld in a two dimensional electron gas under the influence of a plane of InAs self-assembled quantum dots located at 30 Å below the AlGaAs/GaAs heterointerface. The transition is observed as a function of temperature and electric field at B=0. A scaling analysis yields exponents similar to those obtained for Si MOSFET's . We suggest that the disorder introduced by the quantum dots plays a crucial role.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots	-
Appears in Collections:	Physics and Astronomy

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