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http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2772Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.creator | Bernussi A.A. | - |
| dc.creator | Carvalho Jr. W. | - |
| dc.creator | Furtado M.T. | - |
| dc.creator | Gobbi A.L. | - |
| dc.date | 1999 | - |
| dc.date.accessioned | 2013-05-29T23:30:55Z | - |
| dc.date.available | 2013-05-29T23:30:55Z | - |
| dc.date.issued | 2013-05-30 | - |
| dc.identifier | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400027 | - |
| dc.identifier | http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=746 | - |
| dc.identifier.uri | http://koha.mediu.edu.my:8181/jspui/handle/123456789/2772 | - |
| dc.description | Strained and partially relaxed In1-xGa xAs yP1-y /InP single quantum wells (SQWs) with different cap layer thicknesses and biaxial strain values grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) were investigated by double crystal X-ray diffraction, photoluminescence microscopy (PLM) imaging and photoluminescence spectroscopy techniques. Our results indicate a significant improvement of the optical quality of the quaternary wells with increasing values of the cap layer thickness. Tensile and compressive strained In1-xGa xAs yP1-y /InP SQWs grown with the same structure exhibited different relaxation processes, even when the strain magnitude was the same. PLM images of highly compressive quantum wells exhibited a large number of dark lines corresponding to misfit dislocations as a result of the partial relaxation process in the well material. PLM images of similar tensile strained samples revealed only the presence of dark spots with no evidence of misfit dislocations. | - |
| dc.publisher | Sociedade Brasileira de Física | - |
| dc.source | Brazilian Journal of Physics | - |
| dc.title | Strain and relaxation processes in In1-xGaxAsyP1-y/ InP single quantum wells grown by LP-MOVPE | - |
| Appears in Collections: | Physics and Astronomy | |
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