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Title: | Environment of Er in a-Si:H: co-sputtering versus ion implantation |
Issue Date: | 30-May-2013 |
Publisher: | Sociedade Brasileira de Física |
Description: | We report a comparative Extended X-Ray Fine Structure (EXAFS) study of Er in a-Si:H prepared by Er implantation in a-Si:H and by co-sputtering undergoing the same cumulative annealing processes. It was found that the Er environment in as-implanted samples is formed by Si atoms, which are replaced by oxygen under annealing. In the co-sputtered samples, the initial low coordination oxygen environment evolves under thermal treatment to an Er2O3 -like neighborhood. |
URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/2778 |
Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400029 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=756 |
Appears in Collections: | Physics and Astronomy |
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