Environment of Er in a-Si:H: co-sputtering versus ion implantation

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2778

Full metadata record

DC Field	Value	Language
dc.creator	Piamonteze Cínthia	-
dc.creator	Tessler Leandro R.	-
dc.creator	Alves M. C. Martins	-
dc.creator	Tolentino H.	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:31:55Z	-
dc.date.available	2013-05-29T23:31:55Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400029	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=756	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2778	-
dc.description	We report a comparative Extended X-Ray Fine Structure (EXAFS) study of Er in a-Si:H prepared by Er implantation in a-Si:H and by co-sputtering undergoing the same cumulative annealing processes. It was found that the Er environment in as-implanted samples is formed by Si atoms, which are replaced by oxygen under annealing. In the co-sputtered samples, the initial low coordination oxygen environment evolves under thermal treatment to an Er2O3 -like neighborhood.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Environment of Er in a-Si:H: co-sputtering versus ion implantation	-
Appears in Collections:	Physics and Astronomy

Files in This Item:

There are no files associated with this item.

DSpace JSPUI