Quasi-fermi levels, chemical and electric potential profiles of a semiconductor under illumination

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2793

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DC Field	Value	Language
dc.creator	Santos A. M. dos	-
dc.creator	Beliaev D.	-
dc.creator	Scolfaro L. M. R.	-
dc.creator	Leite J. R.	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:34:25Z	-
dc.date.available	2013-05-29T23:34:25Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400034	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=775	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2793	-
dc.description	A theoretical semi-classical method to calculate the modulated field profile in a semiconductor is presented. The behavior of quasi-Fermi levels and chemical potentials for the majority and minority carriers is investigated. Systematic studies of the non-thermodynamic equilibrium electric potential profile as a function of the modulation light intensity are performed.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Quasi-fermi levels, chemical and electric potential profiles of a semiconductor under illumination	-
Appears in Collections:	Physics and Astronomy

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