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http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2796| Title: | A tight-binding study of acceptor levels in semiconductors |
| Issue Date: | 30-May-2013 |
| Publisher: | Sociedade Brasileira de Física |
| Description: | Acceptor binding energies in zinc-blende semiconductors are determined within the tight-binding formalism. The importance of fitting the valence-band masses in the (100) as well as (111) directions is discussed, and parametrizations that specifically fit the valence-band anisotropy are used to calculate Ge acceptor levels in Al xGa1-x As alloys. The sensitivity of the calculated energies to the parameters that determine bulk masses is investigated, as well as the effect of varying the on-site energy of the impurity. A comparison is made between first-neighbor and second-neighbor hopping models. For shallow levels, both approaches give the same results. For deeper levels, however, important differences arise. Experimental evidence suggests that first-neighbor models are better suited for describing intermediate to deep levels. |
| URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/2796 |
| Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400035 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=779 |
| Appears in Collections: | Physics and Astronomy |
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