A tight-binding study of acceptor levels in semiconductors

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2796

Full metadata record

DC Field	Value	Language
dc.creator	Menchero J. G.	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:34:55Z	-
dc.date.available	2013-05-29T23:34:55Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400035	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=779	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2796	-
dc.description	Acceptor binding energies in zinc-blende semiconductors are determined within the tight-binding formalism. The importance of fitting the valence-band masses in the (100) as well as (111) directions is discussed, and parametrizations that specifically fit the valence-band anisotropy are used to calculate Ge acceptor levels in Al xGa1-x As alloys. The sensitivity of the calculated energies to the parameters that determine bulk masses is investigated, as well as the effect of varying the on-site energy of the impurity. A comparison is made between first-neighbor and second-neighbor hopping models. For shallow levels, both approaches give the same results. For deeper levels, however, important differences arise. Experimental evidence suggests that first-neighbor models are better suited for describing intermediate to deep levels.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	A tight-binding study of acceptor levels in semiconductors	-
Appears in Collections:	Physics and Astronomy

Files in This Item:

There are no files associated with this item.

DSpace JSPUI