High temperature behavior of subpicosecond electron transport transient in 3C- and 6H-SiC

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2799

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DC Field	Value	Language
dc.creator	Bezerra E. F.	-
dc.creator	Caetano E. W. S.	-
dc.creator	Freire V. N.	-
dc.creator	Silva Jr. E. F. da	-
dc.creator	Costa J. A. P. da	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:35:25Z	-
dc.date.available	2013-05-29T23:35:25Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400036	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=785	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2799	-
dc.description	A study of the subpicosecond high-field electron transport transient in 3C- and 6H-SiC polytypes at high lattice temperatures is performed. Electric field intensities up to 1000 kV/cm and lattice temperatures of 300, 673, and 1073 K are considered. It is shown that the transient regime behavior depends on the electric field intensity as well as on the lattice temperature, but it is always shorter or of the order of 0.3 ps. For the lowest lattice temperature, an electron velocity overshoot can always occur when the electric field intensity is higher than 300 kV/cm, but it decreases and can even disappear when the lattice temperature is raised.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	High temperature behavior of subpicosecond electron transport transient in 3C- and 6H-SiC	-
Appears in Collections:	Physics and Astronomy

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