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http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2805| Title: | Impurity breakdown in GaAs samples grown by molecular beam Epitaxy |
| Issue Date: | 30-May-2013 |
| Publisher: | Sociedade Brasileira de Física |
| Description: | In this work we present studies for the behavior of impurity breakdown of two GaAs samples grown by Molecular Beam Epitaxy at 200°C and 300°C. We vary the temperature and the illumination intensity. For the sample grown at 200°C, the transport mechanism after the breakdown is of the same type of the main free carriers at low electric fields. Below 100K, a clear dependence of the threshold electric field with temperature was observed. The sample grown at 300°C shows a breakdown due to an acceptor level at 41meV from the valence band. The threshold electric field increases with illumination due to the generation of free electrons by deep levels. A similar behavior was also observed for a Cr doped GaAs sample. |
| URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/2805 |
| Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400038 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=793 |
| Appears in Collections: | Physics and Astronomy |
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