Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2805
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dc.creatorRubinger R.M.-
dc.creatorOliveira A.G. de-
dc.creatorRibeiro G.M.-
dc.creatorBezerra J.C.-
dc.creatorSilva C.M.-
dc.creatorRodrigues W.N.-
dc.creatorMoreira M.V.B.-
dc.date1999-
dc.date.accessioned2013-05-29T23:36:26Z-
dc.date.available2013-05-29T23:36:26Z-
dc.date.issued2013-05-30-
dc.identifierhttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400038-
dc.identifierhttp://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=793-
dc.identifier.urihttp://koha.mediu.edu.my:8181/jspui/handle/123456789/2805-
dc.descriptionIn this work we present studies for the behavior of impurity breakdown of two GaAs samples grown by Molecular Beam Epitaxy at 200°C and 300°C. We vary the temperature and the illumination intensity. For the sample grown at 200°C, the transport mechanism after the breakdown is of the same type of the main free carriers at low electric fields. Below 100K, a clear dependence of the threshold electric field with temperature was observed. The sample grown at 300°C shows a breakdown due to an acceptor level at 41meV from the valence band. The threshold electric field increases with illumination due to the generation of free electrons by deep levels. A similar behavior was also observed for a Cr doped GaAs sample.-
dc.publisherSociedade Brasileira de Física-
dc.sourceBrazilian Journal of Physics-
dc.titleImpurity breakdown in GaAs samples grown by molecular beam Epitaxy-
Appears in Collections:Physics and Astronomy

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