Please use this identifier to cite or link to this item:
http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2808| Title: | Observation of low frequency oscillations in GaAs samples grown by molecular beam epitaxy at low temperatures |
| Issue Date: | 30-May-2013 |
| Publisher: | Sociedade Brasileira de Física |
| Description: | We have observed Low Frequency Oscillations (LFO) in a GaAs sample grown by molecular beam epitaxy (MBE) at 300 °C as a function of applied electric field, temperature and illumination intensity. Time series of the oscillations for different values of the applied electric field at room temperature were obtained. We have also obtained the jxE characteristics as a function of temperature and light intensity. We were able to control the LFO using three experimental parameters, the electrical field, which controls the oscillation frequency, and the temperature and illumination intensity, which control the carrier density and field-enhanced trapping. We were able to identify the LFO dependence on the carrier density and on the field-enhanced trapping. |
| URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/2808 |
| Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400039 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=797 |
| Appears in Collections: | Physics and Astronomy |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.