Theoretical study of surfactant action of Te on Si(001)/Ge surfaces

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2817

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DC Field	Value	Language
dc.creator	Miwa R. H.	-
dc.creator	Takahashi E. K.	-
dc.date	1999	-
dc.date.accessioned	2013-05-29T23:38:26Z	-
dc.date.available	2013-05-29T23:38:26Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400042	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=810	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2817	-
dc.description	We have performed first-principles total energy calculations to investigate the adsorption process of Ge on Si(001)/Te, and the surfactant action of Te during the epitaxial deposition of Ge on Si(001)/Te, based on an atomic exchange process, Ge <-> Te. The total energy calculation indicates that the adsorption of Ge atom in "vacancy" site is energetically more favourable than its adsorption in "bridge" site. The adsorption of Ge in "on-top" and "anti-bridge" sites can be ruled out. The segregation process of Te atoms, based on an atomic exchange mechanism, reduces the total energy of the surface, confirming the surfactant effect of Te atoms.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Theoretical study of surfactant action of Te on Si(001)/Ge surfaces	-
Appears in Collections:	Physics and Astronomy

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