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http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2826Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.creator | Silva R. Claudino da | - |
| dc.creator | Ferraz A. C. | - |
| dc.date | 1999 | - |
| dc.date.accessioned | 2013-05-29T23:39:57Z | - |
| dc.date.available | 2013-05-29T23:39:57Z | - |
| dc.date.issued | 2013-05-30 | - |
| dc.identifier | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400045 | - |
| dc.identifier | http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=823 | - |
| dc.identifier.uri | http://koha.mediu.edu.my:8181/jspui/handle/123456789/2826 | - |
| dc.description | We investigate the stability and electronic structure of 1×2 and 2×2 GaAs(001):Te and InAs(001):Te surfaces with different degrees of tellurium coverage (thetaTe = <img src="http:/img/fbpe/bjp/v29n4/a4414.gif" alt="a4414.gif (106 bytes)" align="absmiddle">, <img src="http:/img/fbpe/bjp/v29n4/a4412.gif" alt="a4412.gif (100 bytes)" align="absmiddle">, <img src="http:/img/fbpe/bjp/v29n4/a4434.gif" alt="a4434.gif (104 bytes)" align="absmiddle">, 1), by means of rst-principles pseudopotential calculations within density-functional theory. The adsorption stability decreases as the tellurium coverage increases. The adsorption on InAs(001) is more stable than on GaAs(001). As-Ga (or As-In) bonds for the uppermost As atoms are s²p² -like (nearly planar), while the Te bonds at the surfaces are sp³-like. The hetero-dimers in thetaTe = <img src="http:/img/fbpe/bjp/v29n4/a4412.gif" alt="a4412.gif (100 bytes)" align="absmiddle"> modify the character of GaAs(001):Te and InAs(001):Te surfaces resulting in a semiconductor structure. | - |
| dc.publisher | Sociedade Brasileira de Física | - |
| dc.source | Brazilian Journal of Physics | - |
| dc.title | Tellurium - modified surface states of GaAs(001) and InAs(001) | - |
| Appears in Collections: | Physics and Astronomy | |
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