Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2834
Title: Quantum well to quantum wire crossover in AlAs/GaAs/AlAs heterostructures induced by interface roughness increase
Issue Date: 30-May-2013
Publisher: Sociedade Brasileira de Física
Description: Adopting a real-space tight-binding supercell approach, we investigate interface roughness effects in semiconductor heterostructures. AlAs/GaAs/AlAs (001) QWs of average width W are considered, in which one of the interfaces is planar and the other has a shape defined by periodic steps with amplitude A and wavelength lambda. The oscillator strength f of the fundamental transition in the well describes the optical nature of the heterostructures. By investigating the wavefunctions as a function of the interface parameter A, we conclude that the f behavior with A is an optical signature of the quantum well to quantum wire crossover in the heterostructures. Recently, photoluminescence experiments showed that hydrostatic pressure produces an increase in the optical eficiency of heterostructures in which the interfaces present a high degree of roughness. In order to investigate this optical behavior, we discuss hydrostatic pressure effects on rough-interface heterostructures.
URI: http://koha.mediu.edu.my:8181/jspui/handle/123456789/2834
Other Identifiers: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400048
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=834
Appears in Collections:Physics and Astronomy

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