Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2837
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dc.creatorCarvalho Jr Wilson de-
dc.creatorBernussi Ayrton André-
dc.creatorFurtado Mario Tosi-
dc.creatorGobbi Angelo Luiz-
dc.creatorCotta Mônica-
dc.date1999-
dc.date.accessioned2013-05-29T23:42:00Z-
dc.date.available2013-05-29T23:42:00Z-
dc.date.issued2013-05-30-
dc.identifierhttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400049-
dc.identifierhttp://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=839-
dc.identifier.urihttp://koha.mediu.edu.my:8181/jspui/handle/123456789/2837-
dc.descriptionZero-Net-Strained (ZNS) InGaAsP/InGaAsP/InP Multi Quantum Wells (MQW) structures grown by Low Pressure Metalorganic Vapor Phase Epitaxy for 1.55mum laser applications were investigated using atomic force microscopy, photoluminescence spectroscopy and X-ray diffraction. The morphology exhibits a strong anisotropic and modulated behavior. The photoluminescence spectrum shows a broad emission band below the fundamental quantum well transition. The results indicate a strong influence of the growth rate, growth temperature and barrier composition on the surface morphology, and on the optical and structural properties of the ZNS structures. Ridge wave-guide ZNS-MQW laser structures grown at optimized conditions exhibited excellent electro-optic characteristics with low threshold current and high efficiency.-
dc.publisherSociedade Brasileira de Física-
dc.sourceBrazilian Journal of Physics-
dc.titleMorphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55mm laser applications-
Appears in Collections:Physics and Astronomy

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