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مقالات مستوردة من دليل الدوريات مفتوحة المصدر DOAJ
Physics and Astronomy
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Collection's Items (Sorted by Submit Date in Descending order): 661 to 680 of 1008
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Issue Date
Title
Author(s)
30-May-2013
Tellurium - modified surface states of GaAs(001) and InAs(001)
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30-May-2013
Ab initio theoretical studies of atomic and electronic structures of III-nitride (110) surfaces
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30-May-2013
Theoretical study of Si(001)/Te - (1×1), (2×1) and (3×1) surfaces
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30-May-2013
Theoretical study of surfactant action of Te on Si(001)/Ge surfaces
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30-May-2013
Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs
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30-May-2013
Atomic geometry and energetics of native defects in cubic boron nitride
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30-May-2013
Observation of low frequency oscillations in GaAs samples grown by molecular beam epitaxy at low temperatures
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30-May-2013
Impurity breakdown in GaAs samples grown by molecular beam Epitaxy
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30-May-2013
SXS and XPS study of the adsorption and desorption of Te on GaAs (100)
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30-May-2013
High temperature behavior of subpicosecond electron transport transient in 3C- and 6H-SiC
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30-May-2013
A tight-binding study of acceptor levels in semiconductors
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30-May-2013
Quasi-fermi levels, chemical and electric potential profiles of a semiconductor under illumination
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30-May-2013
Band crossing evidence in PbSnTe observed by optical transmission measurements
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30-May-2013
Plasma ion implantation of nitrogen into silicon: high resolution x-ray diffraction
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30-May-2013
Size effects on the growth mode and roughness of sub-micron structures grown by selective area epitaxy
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30-May-2013
Electrochemical characterization on semiconductors p-type CVD diamond electrodes
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30-May-2013
Environment of Er in a-Si:H: co-sputtering versus ion implantation
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30-May-2013
Influence of laser excitation on raman and photoluminescence spectra and FTIR study of porous silicon layers
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30-May-2013
Strain and relaxation processes in In1-xGaxAsyP1-y/ InP single quantum wells grown by LP-MOVPE
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30-May-2013
Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
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Collection's Items (Sorted by Submit Date in Descending order): 661 to 680 of 1008
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Author
9
Ferreira G. F. Leal
8
Navarra F.S.
8
Nielsen M.
7
Crothers S. J.
7
Dickman Ronald
6
Frederico T.
6
Galvão R.M.O.
6
Krein G.
6
Nascimento I.C.
5
Baesso M. L.
.
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Subject
21
General Relativity
9
Mathematical Relativity
7
Numerical Relativity
6
General Physics
6
Gravitational Waves
6
Quantum General Relativity
5
Astrophysics
5
Cosmology
5
Relativity in Astrophysics
4
Experimental Foundations of Gravi...
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Date issued
1008
2013