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DC Field | Value | Language |
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dc.creator | Pereyra I. | - |
dc.creator | Villacorta C. A. | - |
dc.creator | Carreño M.N.P. | - |
dc.creator | Prado R.J. | - |
dc.creator | Fantini M.C.A. | - |
dc.date | 2000 | - |
dc.date.accessioned | 2013-05-30T00:12:52Z | - |
dc.date.available | 2013-05-30T00:12:52Z | - |
dc.date.issued | 2013-05-30 | - |
dc.identifier | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332000000300009 | - |
dc.identifier | http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2000&volume=30&issue=3&spage=533 | - |
dc.identifier.uri | http://koha.mediu.edu.my:8181/jspui/handle/123456789/3021 | - |
dc.description | We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-SiC by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10-3 (omega.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficient acceptor than boron, in accordance to observations in crystalline SiC material. | - |
dc.publisher | Sociedade Brasileira de Física | - |
dc.source | Brazilian Journal of Physics | - |
dc.title | Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD | - |
Appears in Collections: | Physics and Astronomy |
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