Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3021
Full metadata record
DC FieldValueLanguage
dc.creatorPereyra I.-
dc.creatorVillacorta C. A.-
dc.creatorCarreño M.N.P.-
dc.creatorPrado R.J.-
dc.creatorFantini M.C.A.-
dc.date2000-
dc.date.accessioned2013-05-30T00:12:52Z-
dc.date.available2013-05-30T00:12:52Z-
dc.date.issued2013-05-30-
dc.identifierhttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332000000300009-
dc.identifierhttp://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2000&volume=30&issue=3&spage=533-
dc.identifier.urihttp://koha.mediu.edu.my:8181/jspui/handle/123456789/3021-
dc.descriptionWe have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-SiC by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10-3 (omega.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficient acceptor than boron, in accordance to observations in crystalline SiC material.-
dc.publisherSociedade Brasileira de Física-
dc.sourceBrazilian Journal of Physics-
dc.titleHighly ordered amorphous silicon-carbon alloys obtained by RF PECVD-
Appears in Collections:Physics and Astronomy

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.