Dielectric properties of thin film Al/Sb2Pb1Se7/Al devices

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3030

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DC Field	Value	Language
dc.creator	Wagle Shaila	-
dc.creator	Shirodkar Vinay	-
dc.date	2000	-
dc.date.accessioned	2013-05-30T00:14:24Z	-
dc.date.available	2013-05-30T00:14:24Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332000000300012	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2000&volume=30&issue=3&spage=554	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3030	-
dc.description	Metal - glass metal, MGM, thin film devices are prepared using vacuum deposition of Sb2Pb1Se7 compound. The capacitance and the loss tangent variation as a function of temperature and frequency is studied. The observed characteristics are explained using small signal ac circuit analysis. It is shown that the theoretical curve generated using the ac circuit analysis gives excellent fitting with the experimental curve.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Dielectric properties of thin film Al/Sb2Pb1Se7/Al devices	-
Appears in Collections:	Physics and Astronomy

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