Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3208

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DC Field	Value	Language
dc.creator	Viana Carlos E.	-
dc.creator	Silva Ana N. R. da	-
dc.creator	Morimoto Nilton I.	-
dc.creator	Bonnaud Olivier	-
dc.date	2001	-
dc.date.accessioned	2013-05-30T00:56:12Z	-
dc.date.available	2013-05-30T00:56:12Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332001000200023	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2001&volume=31&issue=2&spage=299	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3208	-
dc.description	This study analyses the influence of the argon flow on the Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon oxide thin films by using TEOS as silicon source. The argon flow increases the deposition rate, however it also can creates some defects in the deposited film. Several characterization techniques were used to analyze the deposited films. The presence of argon, in the gas phase, modifies the plasma composition, the surface roughness of silicon wafer, and the surface reaction. The optimum argon flow ranges between 65 and 80 sccm to obtain a silicon oxide thin film with high quality in terms of refractive index, smoothness, and uniformity.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture	-
Appears in Collections:	Physics and Astronomy

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