Sample preparation method for scanning force microscopy

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3290

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DC Field	Value	Language
dc.creator	Jankov I.R.	-
dc.creator	Szente R.N.	-
dc.creator	Goldman I.D.	-
dc.creator	Carreño M.N.P.	-
dc.creator	Swart J.W.	-
dc.creator	Landers R.	-
dc.date	2001	-
dc.date.accessioned	2013-05-30T01:16:51Z	-
dc.date.available	2013-05-30T01:16:51Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332001000400005	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2001&volume=31&issue=4&spage=552	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3290	-
dc.description	We present a method of sample preparation for studies of ion implantation on metal surfaces. The method, employing a mechanical mask, is specially adapted for samples analysed by Scanning Force Microscopy. It was successfully tested on polycrystallyne copper substrates implanted with phosphorus ions at an acceleration voltage of 39keV. The changes of the electrical properties of the surface were measured by Kelvin Probe Force Microscopy and the surface composition was analysed by Auger Electron Spectroscopy.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Sample preparation method for scanning force microscopy	-
Appears in Collections:	Physics and Astronomy

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