Manipulating electrons in nanostructured semiconductors

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3378

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DC Field	Value	Language
dc.creator	Kotthaus Jörg P.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T01:39:05Z	-
dc.date.available	2013-05-30T01:39:05Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200002	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=257	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3378	-
dc.description	A brief overview of electron manipulations in nanostructured semiconductors is given. Such manipulations go average transfer of less than a single electron per controlled step. The applications to nanodevices the scaled down silicon microelectronics is also discussed.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Manipulating electrons in nanostructured semiconductors	-
Appears in Collections:	Physics and Astronomy

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