Semiconductor superlattices: artificial crystals with unique electronic and transport properties

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3380

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DC Field	Value	Language
dc.creator	Grahn H. T.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T01:39:35Z	-
dc.date.available	2013-05-30T01:39:35Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200003	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=259	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3380	-
dc.description	Semiconductor superlattices are artificial crystals with a periodicity much larger than lattice constants of the constituent materials. Applying an electric field parallel to the superlattice axis, i.e., perpendicular to the layers, results in unique electronic and transport properties such as miniband transport and Wannier-Stark localization, which are the basis for the observation of Bloch oscillations. At larger field strengths, resonant tunneling between different mini- or subbands dominates the electronic transport properties. Miniband transport and resonant tunneling are highly nonlinear process resulting in interesting phenomena of self-organization of the field distribution.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Semiconductor superlattices: artificial crystals with unique electronic and transport properties	-
Appears in Collections:	Physics and Astronomy

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