Laser effects in semiconductor heterostructures within an extended dressed-atom approach

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3382

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DC Field	Value	Language
dc.creator	Brandi H.S.	-
dc.creator	Latgé A.	-
dc.creator	Oliveira L.E.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T01:40:06Z	-
dc.date.available	2013-05-30T01:40:06Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200004	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=262	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3382	-
dc.description	We extend the dressed-atom approach to treat the interaction of a laser field with a semiconductor system. The semiconductor is modeled via a simple Kane band-structure scheme and the interaction with the laser field is incorporate through the renormalization of the semiconductor energy gap and conduction/valence effective masses. Far from resonances, such one-body approach allows the study of the effects of laser fields on a variety of optoelectronic phenomena in semiconductor systems for which the effective-mass approximation provides a good physical description. We calculate the effects originated by the laser-dressing on the donor and exciton peack energies in quantum-well heterostructures, and show that they may be quite considerable and observable.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Laser effects in semiconductor heterostructures within an extended dressed-atom approach	-
Appears in Collections:	Physics and Astronomy

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