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http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3392| Title: | Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots |
| Issue Date: | 30-May-2013 |
| Publisher: | Sociedade Brasileira de Física |
| Description: | The characteristics of multi-layered InAs/GaAs self assembled quantum dots (SAQDs) annealed after the growth were here studied using a combination of capacitance-voltage (C-V) measurements,Raman scattering and photoluminescence (PL) spectroscopy. The combination of the results obtained with the three techniques, gave evidences that the annealing at 500º C causes the sharpness of the SAQDs interfaces, while the annealing at 600º C eliminated the SAQDs. However, the comparison with the case of single layered SAQDs, revealed a thermal stability of the last system even at an annealing temperature of 700º C, thus confirming the role of the interlayer strain in the low temperature diffusion process. |
| URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/3392 |
| Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200009 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=287 |
| Appears in Collections: | Physics and Astronomy |
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