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http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3392Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.creator | Chiquito A. J. | - |
| dc.creator | Pusep Yu. A. | - |
| dc.creator | Mergulhão S. | - |
| dc.creator | Gobato Y. Galvão | - |
| dc.creator | Galzerani J. C. | - |
| dc.date | 2002 | - |
| dc.date.accessioned | 2013-05-30T01:42:37Z | - |
| dc.date.available | 2013-05-30T01:42:37Z | - |
| dc.date.issued | 2013-05-30 | - |
| dc.identifier | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200009 | - |
| dc.identifier | http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=287 | - |
| dc.identifier.uri | http://koha.mediu.edu.my:8181/jspui/handle/123456789/3392 | - |
| dc.description | The characteristics of multi-layered InAs/GaAs self assembled quantum dots (SAQDs) annealed after the growth were here studied using a combination of capacitance-voltage (C-V) measurements,Raman scattering and photoluminescence (PL) spectroscopy. The combination of the results obtained with the three techniques, gave evidences that the annealing at 500º C causes the sharpness of the SAQDs interfaces, while the annealing at 600º C eliminated the SAQDs. However, the comparison with the case of single layered SAQDs, revealed a thermal stability of the last system even at an annealing temperature of 700º C, thus confirming the role of the interlayer strain in the low temperature diffusion process. | - |
| dc.publisher | Sociedade Brasileira de Física | - |
| dc.source | Brazilian Journal of Physics | - |
| dc.title | Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots | - |
| Appears in Collections: | Physics and Astronomy | |
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