Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3394

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DC Field	Value	Language
dc.creator	Silva M. J. da	-
dc.creator	Quivy A. A.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T01:43:07Z	-
dc.date.available	2013-05-30T01:43:07Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200010	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=290	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3394	-
dc.description	The vertical coupling of InAs quantum dots and their capping with In0. 1Ga0. 9As layers were investigated in order to shift the optical emission of the structures toward longer wavelengths. We observed that both ways can not be used simultaneously by just replacing part of the usual GaAs spacer layer by In0. 1Ga0. 9As because the intermixing of Ga and In atoms is enhanced in stacked layers and causes a blueshift of the emission instead of the expected redshift.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers	-
Appears in Collections:	Physics and Astronomy

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