Ballistic transport in semiconductor quantum wires in the presence of defects

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3398

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DC Field	Value	Language
dc.creator	Rocha A. R.	-
dc.creator	Brum J. A.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T01:44:08Z	-
dc.date.available	2013-05-30T01:44:08Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200012	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=296	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3398	-
dc.description	We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the Landauer formalism. We consider the effects on the transport properties inside semiconductor quantum waveguides of different shapes when a defect is located either in the wire region or in the quasi-two-dimensional region. We observe changes on the plateau's threshold when the defect is placed inside the wire and lowering of the conductance plateaus themselves below the conductance quantum G0 =2e² /h when the defect is outside the wire.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Ballistic transport in semiconductor quantum wires in the presence of defects	-
Appears in Collections:	Physics and Astronomy

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