Please use this identifier to cite or link to this item:
http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3408| Title: | Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells |
| Issue Date: | 30-May-2013 |
| Publisher: | Sociedade Brasileira de Física |
| Description: | Photoluminescence (PL) and excitation PL measurements have been performed at different temperatures in a number of lattice-matched GaAs/In0.49Ga0.51P quantum wells, where the uctuations of the potential energy are comparable with the thermal energy of the photocreated carriers. Two samples with different well widths allow to observe a series of anomalous e ects in their optical response. The observed effects are related to the disorder in the interface, characterizing uctuations in the confinement potential energy. It is proposed that the carrier relaxation processes occur either at the local minima or at the absolute minimum of the confinement potential, depending on the ratio of the thermal energy and the magnitude of the potential fluctuations. |
| URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/3408 |
| Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200017 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=314 |
| Appears in Collections: | Physics and Astronomy |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.