Please use this identifier to cite or link to this item:
http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3412| Title: | Resonant tunneling of polarized electrons through nonmagnetic III-V semiconductor multiple barriers |
| Issue Date: | 30-May-2013 |
| Publisher: | Sociedade Brasileira de Física |
| Description: | The quantum transport of spin-polarized electrons across nonmagnetic III-V semiconductor multiple barriers is considered theoretically. We have calculated the spin dependent transmission coeficient, for conducting electrons transversing lattice-matched In0. 53Ga0. 47As/GaAs0. 5Sb0: /In0. 53Ga0. 47As/ InP/In0. 53Ga0. 47As nanostructures with different numbers of asymmetric double barriers, as a function of electron energy and angle of incidence. Spin-orbit split resonances, due to the Rashba term, are observed. The envelope function approximation and the Kane k ·p model for the bulk are used. For an unpolarized incident beam of electrons, we also obtain the spin polarization of the transmitted beam. The formation of spin dependent minibands of energy with nonzero transmission is observed. |
| URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/3412 |
| Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200019 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=321 |
| Appears in Collections: | Physics and Astronomy |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.