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http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3420| Title: | Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices |
| Issue Date: | 30-May-2013 |
| Publisher: | Sociedade Brasileira de Física |
| Description: | The interfaces in InP=In0.53 Ga0.47As superlattices modulation doped with Si were investigated using magneto-transport, capacitance-voltage, and high resolution X-ray diffraction measurements. Results indicate that a thick interfacial layer is formed when InP is grown on top of In xGa1-xAs, and that Si atoms that fall in the interfacial layer have a high probability of not forming a shallow donor center. Using a simple theoretical model the width of the interfacial layer which was estimated to be 7±1 monolayers. |
| URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/3420 |
| Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200023 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=334 |
| Appears in Collections: | Physics and Astronomy |
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